As powerful as today's microfabrication tools are, they are limited to 2.5 geometries (i.e., extruded 2D). This places significant limits on the design of microstructures, which in many cases either compromises device performance or makes certain potential devices unmanufacturable. At Nielson Scientific, we believe the next major step in microfabrication is to go to true D. Our proprietary 3D semiconductor microfabrication technique has been described as "The Nanoscribe for Semiconductors".
See our publication in Nature here.
Some of the materials we have shown this technique in are Silicon, Silicon Carbide, and Diamond. Many other semiconductors, such as Gallium Nitride, are currently under investigation.
Pictured is an example of this method used to create a non-line-of-sight, high-aspect-ratio via in Silicon Carbide. This feature was cut in half and viewed in an SEM to create the image. For microfluidic applications, the via is left open, while for signal routing applications, the via is electroplated to conduct the signal.
Three-dimensional through wafer vias have been used in various projects to get signals through very efficiently to where they need to go. Pictured is a microscope image and a corresponding x-ray image showing the parallel vias.
With complete 3D freedom signals between chiplets can be connected in a much smaller footprint. Pictured is a rendering of this concept that is enabled by true 3D microfabrication.
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